Process for mechanical chemical polishing of a layer in a copper-based material
US6302765A · kind A · utility
5Cited by
22References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 2, 1999 |
| Grant date | Oct 16, 2001 |
| Priority date | — |
| Expiry date | Aug 2, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Process for mechanical chemical polishing of a layer in a copper-based material using a polishing composition, characterized in that said polishing composition comprises an aqueous suspension of individualized colloidal silica particles not linked to each other by siloxane bonds, the average diameter of which is comprised between 10 and 100 nm, the pH of the aqueous suspension being comprised between 1 and 5.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.