Method for benchmarking thin film measurement tools
US6303397A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 1999 |
| Grant date | Oct 16, 2001 |
| Priority date | — |
| Expiry date | Dec 17, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T436/106664
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for calibrating thin film measurement tools includes the steps of forming an insulation layer on a semiconductor substrate, and measuring a thickness of the insulation layer using a first measurement tool. The insulation layer is exposed to an ambient environment causing a contamination layer to form thereon. At least a portion of the contamination layer is removed by heating the semiconductor substrate, and the thickness of the insulation layer and the contamination layer is measured after being heated using a second measurement tool. The first and second measurement tools are at respective widely spaced geographic locations. The steps of heating and measuring are repeated until a measurement is obtained indicating that the contamination level has been removed. The measured value of the thickness of the insulation layer using the second measurement tool is then compared to the measured value of the thickness of the insulation layer using the first measurement tool to benchmark the first and second measurement tools.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.