Method for fabricating self-aligned contact hole
US6303491A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 2, 1999 |
| Grant date | Oct 16, 2001 |
| Priority date | — |
| Expiry date | Apr 2, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a self-aligned contact hole in accordance with the present invention is disclosed. First a conductive layer, a silicon oxide layer, and a first silicon nitride layer are formed on a silicon substrate. Next, the first silicon nitride layer, the silicon oxide layer, and the conductive layer are etched to form a trench. Then, a BPSG layer is formed over the first silicon nitride layer. A photoresist layer having an opening is defined. Then, using the photoresist layer as the masking layer, a part of BPSG layer is etched to form a self-aligned hole. Next, the photoresist layer is removed. Afterward, a second silicon nitride layer is formed and etched back to form a spacer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.