Silicon oxynitride film
US6303520A · kind A · utility
15Cited by
6References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 15, 1998 |
| Grant date | Oct 16, 2001 |
| Priority date | — |
| Expiry date | Dec 15, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02238
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An oxynitride film on the surface of a silicon or silicon germanium substrate is described where film is substantially an oxide film at the film oxide interface, and the nitrogen content of the film increases with the distance away from the substrate. The film is made by a process of rapidly processing a clean silicon wafer in an atmosphere of a nitrogen containing gas containing a very small percentage of oxygen containing gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.