Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
US6305314A · kind A · utility
363Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 17, 1999 |
| Grant date | Oct 23, 2001 |
| Priority date | — |
| Expiry date | Dec 17, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28556
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A new method and apparatus for avoiding contamination of films deposited in layered depositions, such as Atomic Layer Deposition (ALD) and other sequential chemical vapor deposition (CVD) processes, is taught, wherein CVD-deposited contamination of ALD films is prevented by use of a pre-reaction chamber that effectively causes otherwise-contaminating gaseous constituents to deposit on wall elements of gas-delivery apparatus prior to entering the ALD chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.