Integrated power oscillator RF source of plasma immersion ion implantation system
US6305316A · kind A · utility
48Cited by
9References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2000 |
| Grant date | Oct 23, 2001 |
| Priority date | — |
| Expiry date | Jul 20, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32082
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A wafer processing system is provided. The system includes a wafer handling system for introducing semiconductor wafers into a processing chamber. An oscillator is operatively coupled to an antenna for igniting a plasma within the processing chamber. The plasma and antenna form a resonant circuit with the oscillator, and the oscillator varies an output characteristic associated therewith based on a load change in the resonant circuit during plasma ignition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.