Metal complexes with chelating C-,N-donor ligands for forming metal-containing films
US6306217A · kind A · utility
13Cited by
13References
34Claims
0Family size
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Key dates
| Filing date | Aug 30, 2000 |
| Grant date | Oct 23, 2001 |
| Priority date | — |
| Expiry date | Aug 30, 2020 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/18
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a film on a substrate using transition metal or lanthanide complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.