Inventor · Boise, ID, US

Stefan Uhlenbrock

61Patents
18h-index
15Co-inventors
81Inventor score

Filing activity: Mar 9, 1998 → Mar 29, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US9865456B1 Methods of forming silicon nitride by atomic layer deposition and methods of forming semiconductor structures Electricity 379 Active
US6452017B1 Complexes having tris(pyrazolyl)methanate ligands Electricity 267 Expired
US7250367B2 Deposition methods using heteroleptic precursors Electricity 118 Expired
US7115166B2 Systems and methods for forming strontium- and/or barium-containing layers Electricity 114 Expired
US6730164B2 Systems and methods for forming strontium- and/or barium-containing layers Electricity 110 Expired
US7393785B2 Methods and apparatus for forming rhodium-containing layers Electricity 60 Active
US6541067B1 Solvated ruthenium precursors for direct liquid injection of ruthenium and ruthenium oxide and method of using same Emerging Cross-Sectional Technologies 58 Expired
US5962716A Methods for preparing ruthenium and osmium compounds Chemistry; Metallurgy 57 Expired
US6998152B2 Chemical vapor deposition methods utilizing ionic liquids Chemistry; Metallurgy 54 Expired
US6656835B2 Process for low temperature atomic layer deposition of Rh Electricity 52 Expired
US6319832A Methods of making semiconductor devices Electricity 51 Expired
US6271131A Methods for forming rhodium-containing layers such as platinum-rhodium barrier layers Electricity 49 Expired
US6881260B2 Process for direct deposition of ALD RhO2 Chemistry; Metallurgy 34 Expired
US5925415A Electroless plating of a metal layer on an activated substrate Chemistry; Metallurgy 31 Expired
US6114557A Methods for preparing ruthenium and osmium compounds Chemistry; Metallurgy 27 Expired
US6517616B2 Solvated ruthenium precursors for direct liquid injection of ruthenium and ruthenium oxide Electricity 21 Expired
US6690055B1 Devices containing platinum-rhodium layers and methods Electricity 20 Expired
US6214729A Metal complexes with chelating C-, N-donor ligands for forming metal-containing films Chemistry; Metallurgy 18 Expired
US6844261B2 Method of forming ruthenium and ruthenium oxide films on a semiconductor structure Emerging Cross-Sectional Technologies 17 Expired
US6576778B1 Methods for preparing ruthenium and osmium compounds Chemistry; Metallurgy 16 Expired
US6773495B2 Solutions of metal-comprising materials Electricity 15 Expired
US6656839B2 Solutions of metal-comprising materials, and methods of making solutions of metal-comprising materials Electricity 15 Expired
US6495459B2 Solutions of metal-comprising materials, methods of forming metal-comprising layers, methods of storing metal-comprising materials, and methods of forming capacitors Electricity 15 Expired
US6306217A Metal complexes with chelating C-,N-donor ligands for forming metal-containing films Chemistry; Metallurgy 13 Expired
US6943073B2 Process for low temperature atomic layer deposition of RH Electricity 11 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.