Method of making polysilicon resistor having adjustable temperature coefficients

US6306718A · kind A · utility

Assignee

• Dallas Semiconductor Corporation · US

Inventors

• Varun Singh · Wondelgem, BE
• Tanmay Kumar · Pleasanton, US
• Thomas E. Harrington, III · Los Altos, US
• Roy Hensley · Dodge City, US
• Allan T. Mitchell · Rockwall, US
• Jack Qian · Plano, US

Key dates

• Filing date: Apr 26, 2000
• Grant date: Oct 23, 2001
• Expiry date: Apr 26, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/209

Abstract

A polysilicon resistor is formed using a late implant process. Low dopant concentrations on the order of 6.times.10.sup.19 to 3.75.times.10.sup.20 have shown good results. with a reduced post anneal temperature. Both the first and second order temperature coefficients (TC1 and TC2) can then be adjusted. Using electrical trimming resistors can be produced with highly linear temperature characteristics. By varying the geometries of the resistors, low trimming threshold current densities and voltages can be used to produce good results.