Method for making a photoresist layer having increased resistance to blistering, peeling, lifting, or reticulation
US6306780A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 26, 2000 |
| Grant date | Oct 23, 2001 |
| Priority date | — |
| Expiry date | Oct 26, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/266
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making a photoresist layer includes forming a photoresist layer adjacent a substrate and patterning the photoresist layer. The photoresist layer may include at least one of a solvent and water. The photoresist layer may then be heated and exposed to ultraviolet light during the heating to reduce at least one of the solvent and water therein. As a result, the formation of gases in the photoresist layer during ion implantation is reduced, which thus reduces damage to the photoresist layer from blistering, peeling, lifting, or reticulation, for example. The photoresist layer may be formed to have a thickness greater than about 2 .mu.m, for example, to block high-current, high-dosage, high-energy ion implantation. Exposing may include exposing the photoresist layer to ultraviolet light having a power density in a range of about 200 to 500 mW/cm.sup.2, and, more preferably, about 270 to 360 mW/cm.sup.2, and having a wavelength in a range of about 200 to 300 nm, for example. The photoresist layer may be heated for about 200 to 400 seconds and to a temperature in a range of about 150.degree. C. to 250.degree. C., and more preferably about 230.degree. C. to 250.degree. C. Furt…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.