Suppression of interconnect stress migration by refractory metal plug
US6307268A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 30, 1999 |
| Grant date | Oct 23, 2001 |
| Priority date | — |
| Expiry date | Dec 30, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An interconnect structure for use in semiconductor devices, comprising: (a) a thin and elongated aluminum wire connected to a first metal structure; and (b) a plurality of regularly spaced dummy tungsten plugs which are connected to the aluminum wire at one end and are buried in an underlying dielectric layer so that it is insulated at the other end. The dummy tungsten plugs absorb the mobile aluminum atoms generated through stress-induced migration when the interconnect structure is subject to a rapid temperature change, thus preventing the via bulging problem which could seriously damage the second metal structure above the first metal structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.