Process for operating a semiconductor device
US6307782A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 3, 2000 |
| Grant date | Oct 23, 2001 |
| Priority date | — |
| Expiry date | Apr 3, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2216/06
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Programmable cells (22, 24, 26, 28) may have discontinuous storage elements (228, 248, 268, 288) as opposed to a continuous floating gate. Each cell further includes first and second current carry electrodes (222, 226, 242, 246, 262, 266, 282, 286) and a control gate electrode (224, 244, 264, 284). In one embodiment, potentials for programming can be selected to program a programmable cell relatively quickly without the need for relatively high potentials. Alternatively, programming can be achieved by flowing current in one direction and then in the opposite direction. In some embodiments, time-variant signals can used during an operation. Embodiments of the present invention can be used with different types of programmable cells including those used in memory arrays and in field programmable gate arrays.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.