Integrated formation of LDD and non-LDD semiconductor devices
US6309936A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 1998 |
| Grant date | Oct 30, 2001 |
| Priority date | — |
| Expiry date | Sep 30, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A method of forming a semiconductor device includes forming a first gate electrode over a substrate and then forming a spacer on at least one sidewall of the first gate electrode. A second gate electrode is formed over the substrate after forming the spacer. A first dopant is implanted into the substrate to form a first heavily doped active region adjacent to the spacer and spaced from the first gate electrode and a second heavily doped active region adjacent to the second gate electrode. The spacer is then removed and a second dopant is implanted into the substrate to form a lightly doped active region adjacent to the first gate electrode. In some instances, gate dielectrics for the first and second gate electrodes are formed using different materials and/or having different thicknesses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.