Method for using a CVD organic barc as a hard mask during via etch
US6309955A · kind A · utility
35Cited by
3References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 16, 2001 |
| Grant date | Oct 30, 2001 |
| Priority date | — |
| Expiry date | Feb 16, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76808
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a via of a metal interconnect structure in a semiconductor device employs a CVD organic BARC between a low k dielectric material and a via photoresist mask. The CVD organic BARC is deposited over the low k dielectric film and protects the film during formation and patterning of the via photoresist mask. Furthermore, the presence of the BARC permits the photoresist mask to be thinner than that used in conventional techniques thereby improving lithography resolution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.