Methods for reducing plasma-induced charging damage
US6309979A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 1996 |
| Grant date | Oct 30, 2001 |
| Priority date | — |
| Expiry date | Dec 18, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method in a high density plasma chamber for protecting a semiconductor substrate from charging damage from plasma-induced current through the substrate while etching through a selected portion of a conductive layer above the substrate. The method includes performing a bulk etch at least partially through the selected portion of the conductive layer using a first power setting for a plasma generating source of the high density plasma chamber. The method further includes performing a clearing etch through the selected portion of the conductive layer using a second power setting for the plasma generating source. In accordance with this embodiment, the second power setting is substantially minimized to reduce the charging damage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.