Edge bevel removal of copper from silicon wafers
US6309981A · kind A · utility
91Cited by
4References
45Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 25, 2000 |
| Grant date | Oct 30, 2001 |
| Priority date | — |
| Expiry date | Apr 25, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6708
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Chemical etching methods and associated modules for performing the removal of metal from the edge bevel region of a semiconductor wafer are described. The methods and systems apply liquid etchant in a precise manner at the edge bevel region of the wafer under viscous flow conditions, so that the etchant is applied on to the front edge area and flows over the side edge and onto the back edge in a viscous manner. The etchant thus does not flow or splatter onto the active circuit region of the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.