High voltage thin film transistor with improved on-state characteristics and method for making same
US6310378A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2000 |
| Grant date | Oct 30, 2001 |
| Priority date | — |
| Expiry date | Mar 30, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/251
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is directed to an SOI LDMOS device having improved current handling capability, particularly in the source-follower mode, while maintaining an improved breakdown voltage capability. The improvement in current handling capability is achieved in a first embodiment by introducing an offset region between the source and thin drift regions. The offset region achieves an offset between the onset of the linear doping profile and the thinning of the SOI layer that results in the thin drift region. In a second embodiment a further increase in the current handling capability of an SOI device is achieved by fabricating an oxide layer over the offset region, with the thickness of the oxide layer layer varying up to about half the thickness of the oxide layer fabricated over the thin drift region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.