Apparatus and method for controlling the ratio of reactive to non-reactive ions in a semiconductor wafer processing chamber
US6312554A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 5, 1996 |
| Grant date | Nov 6, 2001 |
| Priority date | — |
| Expiry date | Dec 5, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/46
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A applicator for focusing a plasma directly into a process chamber in which a process gas is injected into an applicator housing through a narrow channel. A focused power source generates a homogeneous plasma from the process gas within the applicator. The homogeneous plasma is focused directly into the process chamber through an outlet defined in the applicator. The outlet is configured to provide a desired expansion of gas or plasma torch strength. In the preferred embodiment of the invention, a plasma of non-reactive species is directly focused into the process chamber to increase the density of the non-reactive ions in the chamber, such that the ratio of reactive and non-reactive ions in the process chamber is controlled, and etch process performance is enhanced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.