Yan Ye
118Patents
35h-index
132Co-inventors
93Inventor score
Filing activity: Jun 2, 1993 → Aug 5, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6352049B1 | Plasma assisted processing chamber with separate control of species density | Electricity | 419 | Expired |
| US6080529A | Method of etching patterned layers useful as masking during subsequent etching or for damascene structures | Electricity | 403 | Expired |
| US5756400A | Method and apparatus for cleaning by-products from plasma chamber surfaces | Emerging Cross-Sectional Technologies | 318 | Expired |
| US6547977B1 | Method for etching low k dielectrics | Electricity | 291 | Expired |
| US6352081B1 | Method of cleaning a semiconductor device processing chamber after a copper etch process | Emerging Cross-Sectional Technologies | 217 | Expired |
| US6312554A | Apparatus and method for controlling the ratio of reactive to non-reactive ions in a semiconductor wafer processing chamber | Electricity | 189 | Expired |
| US6143476A | Method for high temperature etching of patterned layers using an organic mask stack | Electricity | 143 | Expired |
| US6331380A | Method of pattern etching a low K dielectric layer | Electricity | 92 | Expired |
| US5710486A | Inductively and multi-capacitively coupled plasma reactor | Electricity | 85 | Expired |
| US6853141B2 | Capacitively coupled plasma reactor with magnetic plasma control | Electricity | 84 | Expired |
| US7220937B2 | Plasma reactor with overhead RF source power electrode with low loss, low arcing tendency and low contamination | Electricity | 73 | Expired |
| US6894245B2 | Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression | Electricity | 70 | Expired |
| US6586886B1 | Gas distribution plate electrode for a plasma reactor | Electricity | 68 | Expired |
| US6458516B1 | Method of etching dielectric layers using a removable hardmask | Electricity | 65 | Expired |
| US5879575A | Self-cleaning plasma processing reactor | Emerging Cross-Sectional Technologies | 63 | Expired |
| US7955986B2 | Capacitively coupled plasma reactor with magnetic plasma control | Electricity | 57 | Active |
| US6348126B1 | Externally excited torroidal plasma source | Electricity | 56 | Expired |
| US7030335B2 | Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression | Electricity | 53 | Expired |
| US5968847A | Process for copper etch back | Electricity | 53 | Expired |
| US5900062A | Lift pin for dechucking substrates | Electricity | 49 | Expired |
| US5456796A | Control of particle generation within a reaction chamber | Emerging Cross-Sectional Technologies | 47 | Expired |
| US6551446B1 | Externally excited torroidal plasma source with a gas distribution plate | Electricity | 47 | Expired |
| US6453842B1 | Externally excited torroidal plasma source using a gas distribution plate | Electricity | 47 | Expired |
| US5817534A | RF plasma reactor with cleaning electrode for cleaning during processing of semiconductor wafers | Emerging Cross-Sectional Technologies | 46 | Expired |
| US6921727B2 | Method for modifying dielectric characteristics of dielectric layers | Electricity | 46 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.