Method of forming a (200)-oriented platinum layer
US6312567A · kind A · utility
3Cited by
6References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 27, 1999 |
| Grant date | Nov 6, 2001 |
| Priority date | — |
| Expiry date | May 27, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of depositing a (200)-oriented platinum thin film on a substrate, including the steps of forming a oxygen containing platinum layer on the surface of a silicon wafer heated to a temperature range over room temperature and not exceeding 700.degree. C. under a mixed gaseous atmosphere of oxygen and inert gas and annealing the substrate at a temperature between 400.degree. C. and 1000.degree. C. The platinum thin film formed according to the present invention in (200)-oriented and does not have any conventional defects such as hillocks or voids.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.