Method for manufacturing bonded wafer and bonded wafer
US6312797A · kind A · utility
42Cited by
5References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 9, 1999 |
| Grant date | Nov 6, 2001 |
| Priority date | — |
| Expiry date | Jul 9, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The object of the invention is to provide a bonded wafer in which an inferior bonding state of the bonded wafer attained by a hydrogen ion delamination method is reduced, no separation or no void is found at the connecting interface under a superior production characteristic and in a low cost. In a method for manufacturing a bonded wafer by a hydrogen ion delamination method, carbon concentration at a close contacted surface where both wafers are closely contacted from each other is 3-10.sup.14 atoms/cm.sup.2 or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.