Method and apparatus for controlling chemical interactions during planarization of microelectronic substrates
US6313038A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2000 |
| Grant date | Nov 6, 2001 |
| Priority date | — |
| Expiry date | Apr 26, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method and apparatus for planarizing a microelectronic substrate. In one embodiment, the microelectronic substrate is engaged with a planarizing medium that includes a planarizing pad and a planarizing liquid, at least one of which includes a chemical agent that removes a corrosion-inhibiting agent from discrete elements (such as abrasive particles) of the planarizing medium and/or impedes the corrosion-inhibiting agent from coupling to the discrete elements. The chemical agent can act directly on the corrosion-inhibiting agent or can first react with a constituent of the planarizing liquid to form an altered chemical agent, which then interacts with the corrosion-inhibiting agent. Alternatively, the altered chemical agent can control other aspects of the manner by which material is removed from the microelectronic substrate, for example, the material removal rate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.