Chemical mechanical polishing composition and process
US6313039A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 11, 2000 |
| Grant date | Nov 6, 2001 |
| Priority date | — |
| Expiry date | Jan 11, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/959
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A composition for chemical mechanical polishing that includes a slurry is described. A sufficient amount of a selectively oxidizing and reducing compound is provided to produce a differential removal of a metal and a dielectric material. A pH adjusting compound adjusts the pH of the composition to provide a pH that makes the selectively oxidizing and reducing compound provide the differential removal of a metal and a dielectric material. A composition may include an effective amount of an hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, and a peracetic acid or periodic acid. A method for chemical mechanical polishing is described which includes applying a slurry that includes the composition to a surface to produce mechanical removal of the metal and dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.