Wiring layer of a semiconductor integrated circuit
US6313535A · kind A · utility
1Cited by
6References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 16, 1999 |
| Grant date | Nov 6, 2001 |
| Priority date | — |
| Expiry date | Mar 16, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A wiring layer of a semiconductor integrated circuit comprises a first conductive film made of a material containing Al. A material, which reacts with Al at a rate lower than that at which Ti reacts with Al, is provided on the first conductive film. A first barrier metal film is formed, and an interlayer insulating film is formed thereon. An opening is formed in the interlayer insulating film so as to expose the first barrier metal film. The opening is buried to form a second conductive film electrically connected to the first conductive film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.