Programmable resistance memory arrays with reference cells
US6314014A · kind A · utility
317Cited by
17References
99Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 16, 1999 |
| Grant date | Nov 6, 2001 |
| Priority date | — |
| Expiry date | Dec 16, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory system comprising memory cells and reference cells each including a programmable resistance element. The resistance state of a memory cell is determined by comparing a sense signal developed by the memory cell with a reference signal developed by one or more of the reference cells. The programmable resistance elements may comprise a phase-change material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.