Patent · US Expired

Low thermal distortion extreme-UV lithography reticle

US6316150A · kind A · utility

4Cited by
8References
25Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 24, 1998
Grant dateNov 13, 2001
Priority date—
Expiry dateAug 24, 2018

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F7/2004
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

Thermal distortion of reticles or masks can be significantly reduced by emissivity engineering, i.e., the selective placement or omission of coatings on the reticle. Reflective reticles so fabricated exhibit enhanced heat transfer thereby reducing the level of thermal distortion and ultimately improving the quality of the transcription of the reticle pattern onto the wafer. Reflective reticles include a substrate having an active region that defines the mask pattern and non-active region(s) that are characterized by a surface that has a higher emissivity than that of the active region. The non-active regions are not coated with the radiation reflective material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.