Polymer and a forming method of a micro pattern using the same
US6316162A · kind A · utility
460Cited by
11References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 29, 1999 |
| Grant date | Nov 13, 2001 |
| Priority date | — |
| Expiry date | Apr 29, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/106
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
The present invention relates to a polymer represented by following Formula 1 and a method of forming a micro pattern using the same: ##STR1## wherein, R is C.sub.1 -C.sub.10 primary or secondary alcohol group; m and n independently represent a number from 1 to 3; and the ratio a:b:c is (10-80)mol %:(10-80)mol %:(10-80)mol %, respectively. The photoresist polymer according to the present invention is suitable for forming an ultra-micro pattern such as used in 4G or 16G DRAM semiconductor devices using a light source such as ArF, an E-beam, EUV, or an ion-beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.