Nitride based transistors on semi-insulating silicon carbide substrates

US6316793A · kind A · utility

Assignee

• Cree, Inc. · US

Inventors

• Scott Sheppard · Chapel Hill, US
• Scott Allen · Apex, US
• John Williams Palmour · Raleigh, US

Key dates

• Filing date: Jun 12, 1998
• Grant date: Nov 13, 2001
• Expiry date: Jun 12, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

A high electron mobility transistor (HEMT) is disclosed that includes a semi-insulating silicon carbide substrate, an aluminum nitride buffer layer on the substrate, an insulating gallium nitride layer on the buffer layer, an active structure of aluminum gallium nitride on the gallium nitride layer, a passivation layer on the aluminum gallium nitride active structure, and respective source, drain and gate contacts to the aluminum gallium nitride active structure.