Reference signal generation for magnetic random access memory devices
US6317376A · kind A · utility
103Cited by
7References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 20, 2000 |
| Grant date | Nov 13, 2001 |
| Priority date | — |
| Expiry date | Jun 20, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C27/02
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A Magnetic Random Access Memory ("MRAM") device includes an array of memory cells. The device generates reference signals that can be used to determine the resistance states of each memory cell in the array, despite variations in resistance due to manufacturing tolerances and other factors such as temperature gradients across the array, electromagnetic interference and aging.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.