Stable hydride source compositions for manufacture of semiconductor devices and structures
US6319565A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2000 |
| Grant date | Nov 20, 2001 |
| Priority date | — |
| Expiry date | Jun 26, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E60/32
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal hydride derivative wherein at least one hydrogen atom is replaced by deuterium (.sup.2.sub.1 H) or tritium (.sup.3.sub.1 H) isotope. The metal constituent of such metal hydride may, be a Group III, IV or V metal or a transition metal, e.g., antimony, aluminum, gallium, tin, or germanium. The isotopically stabilized metal hydride derivatives of the invention are useful as metal source compositions for chemical vapor deposition, assisted chemical vapor deposition (e.g., laser-assisted chemical vapor deposition, light-assisted chemical vapor deposition, plasma-assisted chemical vapor deposition and ion-assisted chemical vapor deposition), ion implantation, molecular beam epitaxy, and rapid thermal processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.