Conductive photoresist pattern for long term calibration of scanning electron microscope
US6319643A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2000 |
| Grant date | Nov 20, 2001 |
| Priority date | — |
| Expiry date | Jun 19, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/143
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
One aspect of the present invention relates to a method of calibrating a measurement instrument that uses an electron beam, involving the steps of providing a conductive photoresist on a semiconductor structure having a conductivity of at least about 0.1 S/cm; exposing and developing the conductive photoresist to provide a patterned conductive photoresist; using the semiconductor structure having the patterned conductive photoresist thereon as a standard for calibration; and calibrating the measurement instrument. Another aspect of the present invention relates to a method of reducing electrostatic charges on a standard developed photoresist to improve repeated calibrations of a measurement instrument that uses an electron beam, involving the steps of providing a conductive photoresist on a semiconductor structure; exposing the conductive photoresist with radiation having a wavelength of about 370 nm or less; developing the conductive photoresist to provide a patterned conductive photoresist, wherein the patterned conductive photoresist has a conductivity of at least about 0.01 S/cm; and calibrating the measurement instrument with the semiconductor structure having the patterned co…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.