Bryan K. Choo
35Patents
10h-index
27Co-inventors
71Inventor score
Filing activity: Sep 11, 1997 → Jun 21, 2012
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6437329B1 | Use of carbon nanotubes as chemical sensors by incorporation of fluorescent molecules within the tube | Emerging Cross-Sectional Technologies | 43 | Expired |
| US7080330B1 | Concurrent measurement of critical dimension and overlay in semiconductor manufacturing | Physics | 42 | Expired |
| US6354133B1 | Use of carbon nanotubes to calibrate conventional tips used in AFM | Emerging Cross-Sectional Technologies | 29 | Expired |
| US6591658B1 | Carbon nanotubes as linewidth standards for SEM & AFM | Emerging Cross-Sectional Technologies | 27 | Expired |
| US6566655B1 | Multi-beam SEM for sidewall imaging | Electricity | 17 | Expired |
| US6884999B1 | Use of scanning probe microscope for defect detection and repair | Emerging Cross-Sectional Technologies | 16 | Expired |
| US6459482B1 | Grainless material for calibration sample | Electricity | 16 | Expired |
| US6451512B1 | UV-enhanced silylation process to increase etch resistance of ultra thin resists | Electricity | 16 | Expired |
| US6516528B1 | System and method to determine line edge roughness and/or linewidth | Emerging Cross-Sectional Technologies | 15 | Expired |
| US6829380B1 | Optimization of OPC design factors utilizing an advanced algorithm on a low voltage CD-SEM system | Physics | 14 | Expired |
| US6634805B1 | Parallel plate development | Physics | 10 | Expired |
| US6507474B1 | Using localized ionizer to reduce electrostatic charge from wafer and mask | Physics | 10 | Expired |
| US6479820B1 | Electrostatic charge reduction of photoresist pattern on development track | Physics | 10 | Expired |
| US6572252B1 | System and method for illuminating a semiconductor processing system | Electricity | 10 | Expired |
| US6373053B1 | Analysis of CD-SEM signal to detect scummed/closed contact holes and lines | Electricity | 7 | Expired |
| US6462343B1 | System and method of providing improved CD-SEM pattern recognition of structures with variable contrast | Physics | 7 | Expired |
| US6319643A | Conductive photoresist pattern for long term calibration of scanning electron microscope | Emerging Cross-Sectional Technologies | 7 | Expired |
| US5977542A | Restoration of CD fidelity by dissipating electrostatic charge | Physics | 6 | Expired |
| US6396059B1 | Using a crystallographic etched silicon sample to measure and control the electron beam width of a SEM | Electricity | 6 | Expired |
| US6190062A | Cleaning chamber built into SEM for plasma or gaseous phase cleaning | Electricity | 5 | Expired |
| US6912438B2 | Using scatterometry to obtain measurements of in circuit structures | Electricity | 5 | Expired |
| US6635874B1 | Self-cleaning technique for contamination on calibration sample in SEM | Physics | 5 | Expired |
| US7173648B1 | System and method for visually monitoring a semiconductor processing system | Physics | 5 | Expired |
| US6559446B1 | System and method for measuring dimensions of a feature having a re-entrant profile | Physics | 4 | Expired |
| US6444381B1 | Electron beam flood exposure technique to reduce the carbon contamination | Emerging Cross-Sectional Technologies | 4 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.