Method of fabricating barrier layer
US6319826A · kind A · utility
11Cited by
9References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 11, 1999 |
| Grant date | Nov 20, 2001 |
| Priority date | — |
| Expiry date | Mar 11, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76846
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a barrier layer is described. A dielectric layer is formed on a substrate. The dielectric layer comprises an opening exposing a portion of the substrate. A metallic layer, which is conformal to the opening, is formed on the dielectric layer. A first metallic nitride layer, which is conformal to the opening, is formed on the first metallic layer by chemical vapor deposition. The second metallic nitride layer, which is conformal to the opening, is formed on the first metallic nitride layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.