Chemically preventing copper dendrite formation and growth by spraying
US6319833A · kind A · utility
10Cited by
14References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 7, 1998 |
| Grant date | Nov 20, 2001 |
| Priority date | — |
| Expiry date | Dec 7, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The formation and/or growth of dendrites emanating from Cu or Cu alloy lines into a bordering open dielectric field are prevented or substantially reduced by chemically removing a portion of the surface from the dielectric field and from between the lines after CMP by spraying the wafer with a chemical agent. Embodiments include removing up to 60.ANG. of silicon oxide by spraying the wafer with an acidic solution, such as a solution comprising acetic acid and ammonium fluoride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.