Edge termination for a semiconductor component, a schottky diode having an edge termination, and a method for producing the schottky diode

US6320205A · kind A · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Frank Pfirsch · Birkenfeld, DE
• Roland Rupp · Achern, DE

Key dates

• Filing date: Sep 15, 2000
• Grant date: Nov 20, 2001
• Expiry date: Sep 15, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8325

Abstract

An edge termination for a semiconductor component containing a semiconductor body formed of silicon carbide. The edge termination has at least one diode chain that is insulated from the semiconductor body and provided with a plurality of semiconductor layers having alternating conductivity types.