SOI CMOS body contact through gate, self-aligned to source- drain diffusions
US6320225A · kind A · utility
59Cited by
1References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 13, 1999 |
| Grant date | Nov 20, 2001 |
| Priority date | — |
| Expiry date | Jul 13, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure and process for making a semiconductor device with SOI body contacts under the gate conductor. The gate conductor is partitioned into segments and provides a body contact under each gate conductor segment over the width of the device. A plurality of body contacts may be distributed across the length of the gate conductor. This results in a relatively short path for holes leaving the body to traverse and allows accumulated charge to be removed from the body region under the gate. The structure provides for stable and efficient body-contact operation for SOI MOSFETS of any width operating at high speeds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.