Inventor · Clinton Corners, NY, US

Michael Hargrove

58Patents

13h-index

76Co-inventors

87Inventor score

Filing activity: Dec 23, 1993 → Jul 29, 2015

Most-cited inventions

Patent	Title	Area	Cited by	Status
US8048791B2	Method of forming a semiconductor device	Electricity	122	Active
US6372559B1	Method for self-aligned vertical double-gate MOSFET	Electricity	78	Expired
US6320225A	SOI CMOS body contact through gate, self-aligned to source- drain diffusions	Electricity	59	Expired
US6531375B1	Method of forming a body contact using BOX modification	Electricity	42	Expired
US6433587B1	SOI CMOS dynamic circuits having threshold voltage control	Electricity	41	Expired
US6335262B1	Method for fabricating different gate oxide thicknesses within the same chip	Emerging Cross-Sectional Technologies	32	Expired
US9343300B1	Methods of forming source/drain regions for a PMOS transistor device with a germanium-containing channel region	Electricity	24	Active
US5731941A	Electrostatic discharge suppression circuit employing trench capacitor	Electricity	24	Expired
US7932143B1	Methods for protecting gate stacks during fabrication of semiconductor devices and semiconductor devices fabricated from such methods	Electricity	23	Active
US9147730B2	Methods of forming fins for FinFET semiconductor devices and selectively removing some of the fins by performing a cyclical fin cutting process	Electricity	19	Active
US6531741B1	Dual buried oxide film SOI structure and method of manufacturing the same	Electricity	17	Expired
US8361894B1	Methods of forming FinFET semiconductor devices with different fin heights	Electricity	17	Active
US9318342B2	Methods of removing fins for finfet semiconductor devices	Electricity	13	Active
US5401130A	Internal circulation fluidized bed (ICFB) combustion system and method of operation thereof	Mechanical Engineering; Lighting; Heating	13	Expired
US7315438B2	Technique to reduce ESD loading capacitance	Electricity	12	Expired
US8809178B2	Methods of forming bulk FinFET devices with replacement gates so as to reduce punch through leakage currents	Electricity	12	Active
US6756637B2	Method of controlling floating body effects in an asymmetrical SOI device	Electricity	12	Expired
US7723192B2	Integrated circuit long and short channel metal gate devices and method of manufacture	Electricity	12	Active
US7598838B2	Variable inductor technique	Electricity	11	Expired
US8076209B2	Methods for fabricating MOS devices having highly stressed channels	Electricity	11	Active
US7767534B2	Methods for fabricating MOS devices having highly stressed channels	Electricity	11	Active
US6344671B1	Pair of FETs including a shared SOI body contact and the method of forming the FETs	Emerging Cross-Sectional Technologies	10	Expired
US7268645B2	Integrated resonator structure and methods for its manufacture and use	Electricity	10	Expired
US8294211B2	Semiconductor transistor device structure with back side gate contact plugs, and related manufacturing method	Electricity	10	Active
US7998832B2	Semiconductor device with isolation trench liner, and related fabrication methods	Electricity	9	Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.