Patent · US Expired

Method of determining the doping concentration and defect profile across a surface of a processed semiconductor material

US6320403A · kind A · utility

3Cited by

25References

15Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Sunil N. Shabde · Cupertino, US
Yowjuang W. Liu · San Jose, US
Ting Tsui · Plano, US

Key dates

Filing date	Aug 10, 1998
Grant date	Nov 20, 2001
Priority date	—
Expiry date	Aug 10, 2018

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S977/854
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A method (100) of determining a doping type and a doping concentration of a semiconductor material (101) includes the steps of moving carriers (103) in the material, wherein a number of carriers is a function of the doping concentration of the material (101) and a type of carriers is a function of the doping type of the material (101). The carriers are deflected (130) toward a surface (110) of the material (101) and an accumulated charge profile on the surface of the material, due to the deflected carriers, is detected (140) and used to calculate (180) the doping concentration across a surface (110) of the material (101).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.