Memory cell and method for programming thereof
US6320784A · kind A · utility
102Cited by
5References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2000 |
| Grant date | Nov 20, 2001 |
| Priority date | — |
| Expiry date | Mar 14, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2216/08
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory cell (101), its method of formation, and operation are disclosed. In accordance with one embodiment, the memory cell (101) comprises a first and second current carrying electrode (12) a control electrode (19), and doped discontinuous storage elements (17). In accordance with an alternative embodiment, memory cell programming is accomplished by removing or adding an average of approximately at least a first charge (30, 62, 64), which can be electron(s) or hole(s) from each of the doped discontinuous storage elements (17).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.