Structure for a multi-layered dielectric layer and manufacturing method thereof
US6323122A · kind A · utility
0Cited by
10References
23Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 23, 1998 |
| Grant date | Nov 27, 2001 |
| Priority date | — |
| Expiry date | Oct 23, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method and a structure of a multi-layered dielectric layer for forming openings in the direction layers for improving integration of integrated circuits, capability of step coverage, and problems caused by a structure of overhang, in which oblique sidewalls of the openings in multi-layered dielectric layer can improve the step coverage in the following manufacturing process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.