Electrical fuses employing reverse biasing to enhance programming
US6323535A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Jun 16, 2000 |
| Grant date | Nov 27, 2001 |
| Priority date | — |
| Expiry date | Jun 16, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A fuse for semiconductor devices, in accordance with the present invention, includes a cathode including a first dopant type, and an anode including a second dopant type where the second dopant type is opposite the first dopant type. A fuse link connects the cathode and the anode and includes the second dopant type. The fuse link and the cathode form a junction therebetween, and the junction is configured to be reverse biased relative to a cathode potential and an anode potential. A conductive layer is formed across the junction such that current flowing at the junction is diverted into the conductive layer to enhance material migration to program the fuse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.