Apparatus for forming a high dielectric film
US6325017A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 25, 1999 |
| Grant date | Dec 4, 2001 |
| Priority date | — |
| Expiry date | Aug 25, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An apparatus for forming a high dielectric oxide film includes a controllable atomic oxygen source and a vaporized precursor source. A deposition chamber for receiving the atomic oxygen from the atomic oxygen source and vaporized precursor from the vaporized precursor source is used for deposition of the high dielectric oxide film on a surface of a structure located therein. The apparatus further includes a detection mechanism for detecting a characteristic of the deposition of the high dielectric oxide film on the surface of the structure. The controllable atomic oxygen source is controlled as a function of the detected characteristic.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.