Patent · US Expired

Long life high temperature process chamber

US6325858A · kind A · utility

540Cited by
19References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 2, 1998
Grant dateDec 4, 2001
Priority date
Expiry dateNov 2, 2018

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01K7/04
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A generally horizontally-oriented quartz CVD chamber is disclosed with front and rear chamber divider plates adjacent a centrally positioned susceptor and surrounding temperature control ring which divide the chamber into upper and lower regions. Improvement to the lifetime of CVD process components and related throughput improvements are disclosed. A getter plate for attracting some of the unused reactant gas is positioned downstream from the susceptor extending generally parallel to and spaced between the divider plate and the upper chamber wall. This getter plate also minimizes deposition on the chamber walls and improves the efficiency of a cleaning step. Reradiating elements are also located adjacent side walls of the chamber to heat cooler chamber wall areas. The getter plate and the reradiating elements plus the susceptor and surrounding ring are all made of solid chemical vapor deposited SiC to improve the life of the chamber. Also, thermocouples adjacent the susceptor are provided with SiC sheaths to enable the thermocouples to withstand more process cycles than that of quartz sheaths. SiC shields may be provided on quartz components throughout the chamber to protect the q…

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.