Process for producing semiconductor integrated circuit device
US6326216A · kind A · utility
5Cited by
6References
55Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 5, 1997 |
| Grant date | Dec 4, 2001 |
| Priority date | — |
| Expiry date | Aug 5, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In order to improve the dielectric constant, residual dielectric polarization, hysteresis characteristics, etc. of a high-dielectric or ferroelectric thin film for use in the formation of capacitive insulating films of capacitors of a DRAM or a ferroelectric RAM, a target having a density of at least 90% of the theoretical value is used in forming, by sputtering, a high-dielectric or ferroelectric thin film for use in the formation of capacitive insulating films of capacitors of a DRAM or a ferroelectric RAM.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.