Plasma pretreatment of photoresist in an oxide etch process
US6326307A · kind A · utility
125Cited by
5References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 15, 1999 |
| Grant date | Dec 4, 2001 |
| Priority date | — |
| Expiry date | Nov 15, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A photoresist plasma pretreatment performed prior to a plasma oxide etch. The plasma pretreatment is performed with an argon plasma or a carbon tetrafluoride and trifluoromethane plasma with lower power than in the main etch or is performed with a plasma of difluoromethane or trifluoromethane and carbon monoxide but no argon diluent gas. Thereby, striations on the oxide wall are reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.