Low temperature rapid ramping anneal method for fabricating layered superlattice materials and making electronic devices including same

US6326315A · kind A · utility

Assignees

• Symetrix, Inc. · US
• Matsushita Electronics Corporation · JP

Inventors

• Kiyoshi Uchiyama · Colorado Springs, US
• Koji Arita · Osaka, JP
• Narayan Solayappan · Colorado Springs, US
• Carlos A. Paz de Araujo · Colorado Springs, US

Key dates

• Filing date: Mar 9, 2000
• Grant date: Dec 4, 2001
• Expiry date: Mar 9, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/033
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A liquid precursor for forming a layered superlattice material is applied to an integrated circuit substrate. The precursor coating is annealed in oxygen using a rapid ramping anneal ("RRA") technique with a ramping rate of 50.degree. C./second at a hold temperature of 650.degree. C. for a holding time of 30 minutes.