High temperature pressure transducer fabricated from beta silicon carbide
US6327911A · kind A · utility
25Cited by
1References
19Claims
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Key dates
| Filing date | Jun 17, 1998 |
| Grant date | Dec 11, 2001 |
| Priority date | — |
| Expiry date | Jun 17, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L9/0055
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A high temperature pressure transducer employing dielectrically isolated beta silicon carbide pressure sensing elements situated on a diaphragm also fabricated from beta silicon carbide. The dielectrically isolated pressure sensing elements are formed on the diaphragm in method which employs two separately fabricated wafers that are later bonded together.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.