Patent · US Expired

Apparatus for high-resolution in-situ plasma etching of inorganic and metal films

US6328848A · kind A · utility

1Cited by

11References

7Claims

0Family size

Assignee

Conexant Systems, LLC · US

Inventors

Shao-Wen Hsia · Mission Viejo, US
Michael Berg · Waiblingen, DE
Maureen R. Brongo · Laguna Hills, US

Key dates

Filing date	Sep 27, 2000
Grant date	Dec 11, 2001
Priority date	—
Expiry date	Sep 27, 2020

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/67069
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Method and apparatus for plasma etching both metal and inorganic dielectric layers in a single chamber during deep sub-micron semiconductor fabrication. Fluorine based chemistries, or a mixture of fluorine and chlorine based chemistries, are used to etch the inorganic dielectric layer. A switch is then made to chlorine based chemistries, within the same etching chamber, which are utilized to etch the metal layer. Overetching may also be performed with chlorine based chemistries to clear any residuals.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.