Silicon carbide epitaxial layers grown on substrates offcut towards <1100>
US6329088A · kind A · utility
17Cited by
2References
64Claims
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Inventors
Key dates
| Filing date | Jun 24, 1999 |
| Grant date | Dec 11, 2001 |
| Priority date | — |
| Expiry date | Jun 24, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon carbide epitaxial film, grown on an offcut surface of a SiC crystalline substrate of hexagonal crystal form, having an offcut angle of from about 6 to about 10 degrees, toward the <1100> crystalline direction of the substrate. The resultant silicon carbide epitaxial film has superior morphological and material properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.