Integrated self aligned contact etch
US6329292A · kind A · utility
14Cited by
10References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 9, 1998 |
| Grant date | Dec 11, 2001 |
| Priority date | — |
| Expiry date | Jul 9, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated self aligned contact process includes oxide etch with high oxide etch rate, integrated selective oxide etch and nitride liner removal with high selectivity to corner nitride with the ability to remove the bottom nitride liner, and stripping of all polymer and photoresist. C.sub.4 F.sub.8 and CH.sub.2 F.sub.2 are used for the high selectivity oxide etch step. The unique behavior of CH.sub.2 F.sub.2 in high density plasma allows polymer protection to form on the nitride corner/sidewall while at the same time etching the bottom nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.